Abstract: This work reports the first demonstration of 800V irradiation-hardened (IH) GaN device technology on the GaN-on-SiC power integration platform. IH p-GaN HEMT, MIS HEMT and rectifier are ...
SAN ANTONIO--(BUSINESS WIRE)--APEC 2026 – Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a breakthrough in ...
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The new devices enable high-efficiency flyback designs up to 440 W, simplifying power architectures and reducing cost and size. Power Integrations introduced a new family of TOPSwitchGaN™ ICs that ...
Abstract: The accelerating transition to renewable-based power grids is critical for carbon neutrality. Centralized renewable energy deployment usually forms grid-connected microgrids with limited ...
New TOPSwitchGaN ICs more than double power output, reducing system cost, complexity, and design time The new TOPSwitchGaN™ flyback IC family extends the power range of flyback converters to 440 ...
Power Integrations introduced a breakthrough in flyback topology extending the power range of flyback converters to 440W – well beyond the limits that traditionally required more complex resonant and ...
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