For design teams adopting 3D-IC architectures, the relentless pursuit of performance and reliability brings a familiar, yet ...
Abstract: This article aims to provide a survey of modeling and simulation of single-event effects (SEEs) in digital electronics at device, circuit, and system levels. It primarily focuses on the ...
Abstract: The harsh electromagnetic environment poses a threat to the reliability and safe operation of Gallium nitride (GaN) radio frequency and microwave high-electron-mobility transistors (HEMTs).
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