Electronic Design

Self-protected MOSFETs Raise Protection Levels for Inductive Loads

Diodes Incorporated has announced further additions to its IntelliFET® range of self-protected MOSFETs. The 60V, 75mohms (typical) rated single N-channel ZXMS6006DG/SG and dual N-channel ZXMS6006DT8 ...
EDN

Low-Side Gate Drivers: Review and Evaluation

This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...
EDN

What to consider when using self-protected MOSFETs in ruggedized electronic systems

Power devices used in automotive electronic systems must endure extremely harsh environmental conditions. Devices must withstand high voltage spikes resultant from switch-off transients and load dump ...
Business Wire

Toshiba Launches New MOSFET "SSM3K337R" for Relay Drivers

Active clamp structure prevents overvoltage when inductive load is switched off TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO: 6502) today announced that it has launched a MOSFET, "SSM3K337R", ...
Electronic Design

Evaluate Power Device Efficiency with Double-Pulse Testing Using an AFG

Download this article in PDF format. Switching losses are inevitable in any power device. But these losses can be minimized through optimization and rigorous measurement of design parameters related ...