With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
LONDON — Belgian research organization IMEC has extended its work on 32-nm CMOS device scaling to include a project on DRAM MIMCAP (metal-insulator-metal capacitors) process technology. The group says ...
Forward-looking: Memory technology has continuously improved over the last decade to meet the increasing demand for higher bit density, performance, and energy efficiency. Micron is touting new ...
CEO Andy Hsu will introduce new applications and variations for 3D NAND flash and 3D DRAM, including a new AI application called "Local Computing", drastically increasing AI chip performance to a new ...
TL;DR: Samsung's 1c DRAM yield for next-gen HBM4 memory has improved from 0% to around 40%, enabling planned mass production later this year. Design restructuring and process optimizations enhanced ...
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